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Ordering number : ENA1182A
ECH8308
P-Channel Power MOSFET
–12V, –10A, 12.5m Ω , Single ECH8
Features
http://onsemi.com
?
?
?
Best suited for load switching
1.8V drive
Protection diode in
?
?
Low ON-resistance
Halogen free compliance
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
--12
±10
--10
Unit
V
V
A
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
IDP
PD
Tch
Tstg
PW ≤ 10 μ s, duty cycle ≤ 1%
When mounted on ceramic substrate (900mm 2 × 0.8mm)
--40
1.6
150
--55 to +150
A
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7011A-002
Product & Package Information
? Package : ECH8
? JEITA, JEDEC : -
? Minimum Packing Quantity : 3,000 pcs./reel
Top View
2.9
ECH8308-TL-H
Packing Type : TL
Marking
0.15
8
5
JK
0 to 0.02
TL
Lot No.
1
0.65
4
0.3
Electrical Connection
8
7
6
5
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
Bottom View
ECH8
1
2
3
4
Semiconductor Components Industries, LLC, 2013
July, 2013
60612 TKIM/62508PE TIIM TC-00001486 No. A1182-1/7
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